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教育经历1994年 武汉大学物理系本科 1998年 中科院物理所理论物理博士 工作经历1998.10--2007.05 美国内布拉斯加大学博士后、研究助理教授 2007.06--2008.03 同济大学物理系教授 2008.03--2016.06 华东师范大学信息科学技术学院教授 2016.06--2019.06 华东师范大学信息科学技术学院常务副院长 2019.07--2021.12 华东师范大学星空·体育(StarskySports)官方网站常务副院长 2021.03--2022.06 上海推进科技创新中心建设办公室平台处副处长(挂职) 2021.07-- 华东师范大学发展规划部部长兼重点建设办公室主任 个人简介段纯刚,华东师范大学紫江特聘教授,教育部创新团队带头人,国家杰出青年基金获得者,国家“万人计划”领军人才。1994年武汉大学物理系本科毕业,1998年中科院物理所理论物理博士毕业。1998年至2007年在美国从事研究工作,2008年加入华东师范大学,目前担任极化材料与器件教育部重点实验室主任,华东师范大学发展规划部部长兼重点建设办公室主任,曾任华东师范大学信息科学与技术学院常务副院长,星空·体育(StarskySports)官方网站常务副院长。 主要从事新型电子功能材料研究,尤其聚焦磁性、铁电、多铁和谷电子学材料,取得了一系列重要创新成果,主要包括:①提出铁谷体概念和发展了二维铁性研究;②理论设计并实验制备了铁性隧道结,由此开展了基于铁性的神经形态器件研究;③发现了多种新型磁电效应,拓展了磁电效应研究方向,并据此开展了相应实验研究,验证了理论预言。在Nat. Mat.、Nat. Elec.、Nat. Comm.、PRL、Adv. Mater.、Nano Lett.等国际著名学术刊物上共发表论文300余篇,被Rev. Mod. Phys.、Science、Nature及其子刊等国际学术刊物引用15800余次,其中32篇文章引用上百次(谷歌学术),另为四部中英文专著撰写章节。 社会兼职现为中国材料研究学会计算材料学分会委员,中国硅酸盐学会微纳技术分会委员,上海计算物理专业委员,曾任第4届国际材料大会多铁体分会(2012年)国际顾问委员会成员,第4届亚太多铁会委员,目前担任NPJ comp. Mater.副主编,Journal of Physics: Condensed Matter, Journal of Materiomics,Frontiers in Condensed Matter Physics等国际知名杂志编委。 中科院物理所磁学国家重点实验室第八届学术委员会委员 南方科技大学广东省信息功能氧化物材料与器件重点实验室第一届学术委员会委员 西湖大学浙江省量子材料重点实验室第一届学术委员会委员 研究方向主要从事固体材料结构和物性的理论研究和计算模拟‚近期研究领域包括:
拟招收两至三名在上述领域有丰富经验的博士后‚有兴趣可以来email联系! 专业杂志链接:
招生与培养开授课程固体物理 (本科) 磁电子学 (研究生) 科研项目
学术成果近期代表性学术成果: 1. G. Feng, Q. Zhu, X. Liu, L. Chen, X. Zhao, J. Liu, S. Xiong, K. Shan, Z. Yang, Q. Bao, F. Yue, H. Peng, R. Huang, X. Tang, J. Jiang, W. Tang, X. Guo, J. Wang, A. Jiang, B. Dkhil, B. Tian, J. Chu, C. Duan. A ferroelectric fin diode for robust non-volatile memory. Nat. Commun. 15, 513 (2024).
2. X. Deng, Y.-X. Liu, Z.-Z. Yang, Y.-F. Zhao, Y.-T. Xu, M.-Y. Fu, Y. Shen, K. Qu, Z. Guan, W.-Y. Tong, Y.-Y. Zhang, B.-B. Chen, N. Zhong, P.-H. Xiang, C.-G. Duan. Spatial evolution of the proton-coupled Mott transition in correlated oxides for neuromorphic computing. Sci. Adv. 10, eadk9928 (2024).
3. Z. Guan, Y.-Z. Zheng, W.-Y. Tong, N. Zhong, Y. Cheng, P.-H. Xiang, R. Huang, B.-B. Chen, Z.-M. Wei, J.-h. Chu, C.-G. Duan. 2D Janus Polarization Functioned by Mechanical Force. Adv. Mater. n/a, 2403929 (2024).
4. J. Zeng, G. Feng, G. Wu, J. Liu, Q. Zhao, H. Wang, S. Wu, X. Wang, Y. Chen, S. Han, B. Tian, C. Duan, T. Lin, J. Ge, H. Shen, X. Meng, J. Chu, J. Wang. Multisensory Ferroelectric Semiconductor Synapse for Neuromorphic Computing. Adv. Funct. Mater. 34, 2313010 (2024).
5. W. Xu, Y.-P. Shao, J.-L. Wang, J.-D. Zheng, W.-Y. Tong, C.-G. Duan. Origin of metallic ferroelectricity in group-V monolayer black phosphorus. Phys. Rev. B 109, 035421 (2024).
6. Y. Wang, C. Huang, Z. Cheng, Z. Liu, Y. Zhang, Y. Zheng, S. Chen, J. Wang, P. Gao, Y. Shen, C. Duan, Y. Deng, C.-W. Nan, J. Li. Halide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene fluoride)-based Flexible Nanocomposites. Nat. Commun. 15, 3943 (2024).
7. J.-L. Wang, Y.-F. Zhao, W. Xu, J.-D. Zheng, Y.-P. Shao, W.-Y. Tong, C.-G. Duan. Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio. Mater. Horiz. 11, 1325 (2024).
8. H. Wang, J. Meng, J. Lin, B. Xu, H. Ma, Y. Kan, R. Chen, L. Huang, Y. Chen, F. Yue, C.-G. Duan, J. Chu, L. Sun. Origin of the light-induced spin currents in heavy metal/magnetic insulator bilayers. Nat. Commun. 15, 4362 (2024).
9. F. Sui, H. Li, R. Qi, M. Jin, Z. Lv, M. Wu, X. Liu, Y. Zheng, B. Liu, R. Ge, Y.-N. Wu, R. Huang, F. Yue, J. Chu, C. Duan. Atomic-level polarization reversal in sliding ferroelectric semiconductors. Nat. Commun. 15, 3799 (2024).
10. M. Lv, J. Wang, M. Tian, N. Wan, W. Tong, C. Duan, J. Xue. Multiresistance states in ferro- and antiferroelectric trilayer boron nitride. Nat. Commun. 15, 295 (2024).
11. Q. Li, L. Wei, N. Zhong, X. Shi, D. Han, S. Zheng, F. Du, J. Shi, J. Chen, H. Huang, C. Duan, X. Qian. Low-k nano-dielectrics facilitate electric-field induced phase transition in high-k ferroelectric polymers for sustainable electrocaloric refrigeration. Nat. Commun. 15, 702 (2024).
12. Y.-K. Zhang, J.-D. Zheng, W.-Y. Tong, Y.-F. Zhao, Y.-F. Tan, Y.-H. Shen, Z. Guan, F.-Y. Yue, P.-H. Xiang, N. Zhong. Ferroelastically controlled ferrovalley states in stacked bilayer systems with inversion symmetry. Phys. Rev. B 108, L241120 (2023).
13. D.-Y. Zhang, Y. Sang, T. K. Das, Z. Guan, N. Zhong, C.-G. Duan, W. Wang, J. Fransson, R. Naaman, H.-B. Yang. Highly Conductive Topologically Chiral Molecular Knots as Efficient Spin Filters. J. Am. Chem. Soc. 145, 26791 (2023).
14. W. Xu, J. D. Zheng, W. Y. Tong, J. L. Wang, Y. P. Shao, Y. K. Zhang, Y. F. Tan, C. G. Duan. Strain‐Induced Ferroelectric Phase Transition in Group‐V Monolayer Black Phosphorus. Adv. Quantum Technol. 6, 2200169 (2023).
15. G. Wu, X. Zhang, G. Feng, J. Wang, K. Zhou, J. Zeng, D. Dong, F. Zhu, C. Yang, X. Zhao. Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing. Nat. Mater. 22, 1499 (2023).
16. X. Meng, Y. Du, W. Wu, N. B. Joseph, X. Deng, J. Wang, J. Ma, Z. Shi, B. Liu, Y. Ma. Giant superlinear power dependence of photocurrent based on layered Ta2NiS5 photodetector. Adv. Sci. 10, 2300413 (2023).
17. Y.-Q. Li, X. Zhang, X. Shang, Q.-W. He, D.-S. Tang, X.-C. Wang, C.-G. Duan. Magnetic and Ferroelectric Manipulation of Valley Physics in Janus Piezoelectric Materials. Nano Lett. 23, 10013 (2023).
18. J.-D. Zheng, Y.-F. Zhao, Z.-Q. Bao, Y.-H. Shen, Z. Guan, N. Zhong, F.-Y. Yue, P.-H. Xiang, C.-G. Duan. Flexoelectric effect induced p–n homojunction in monolayer GeSe. 2D Mater. 9, 035005 (2022).
19. P.-C. Wu, C.-C. Wei, Q. Zhong, S.-Z. Ho, Y.-D. Liou, Y.-C. Liu, C.-C. Chiu, W.-Y. Tzeng, K.-E. Chang, Y.-W. Chang, J. Zheng, C.-F. Chang, C.-M. Tu, T.-M. Chen, C.-W. Luo, R. Huang, C.-G. Duan, Y.-C. Chen, C.-Y. Kuo, J.-C. Yang. Twisted oxide lateral homostructures with conjunction tunability. Nat. Commun. 13, 2565 (2022).
20. J. Lao, M. Yan, B. Tian, C. Jiang, C. Luo, Z. Xie, Q. Zhu, Z. Bao, N. Zhong, X. Tang, L. Sun, G. Wu, J. Wang, H. Peng, J. Chu, C. Duan. Ultralow-Power Machine Vision with Self-Powered Sensor Reservoir. Adv. Sci. 9, 2106092 (2022).
21. Y.-H. Lai, J.-D. Zheng, S.-C. Lu, Y.-K. Wang, C.-G. Duan, P. Yu, Y.-Z. Zheng, R. Huang, L. Chang, M.-W. Chu, J.-H. Hsu, Y.-H. Chu. Antiferroelectric PbSnO3 epitaxial thin films. Adv. Sci. 9, 2203863 (2022).
22. Z. Guan, Y. Zhao, X. Wang, N. Zhong, X. Deng, Y. Zheng, J. Wang, D. Xu, R. Ma, F. Yue, Y. Cheng, R. Huang, P. Xiang, Z. Wei, J. Chu, C. Duan. Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe. ACS Nano 16, 1308 (2022).
23. Z. Guan, Y.-K. Li, Y.-F. Zhao, Y. Peng, G. Han, N. Zhong, P.-H. Xiang, J.-H. Chu, C.-G. Duan. Mechanical polarization switching in Hf0.5Zr0.5O2 thin film. Nano Lett. 22, 4792 (2022).
24. C.-C. Chiu, S.-Z. Ho, J.-M. Lee, Y.-C. Shao, Y. Shen, Y.-C. Liu, Y.-W. Chang, Y.-Z. Zheng, R. Huang, C.-F. Chang, C.-Y. Kuo, C.-G. Duan, S.-W. Huang, J.-C. Yang, Y.-D. Chuang. Presence of Delocalized Ti 3d Electrons in Ultrathin Single-Crystal SrTiO3. Nano Lett. 22, 1580 (2022).
25. Y.-F. Zhao, Y.-H. Shen, H. Hu, W.-Y. Tong, C.-G. Duan. Combined piezoelectricity and ferrovalley properties in Janus monolayer VClBr. Phys. Rev. B 103, 115124 (2021).
26. L. Zhang, G. S. Shi, B. Q. Peng, P. F. Gao, L. Chen, N. Zhong, L. H. Mu, L. J. Zhang, P. Zhang, LuGou, Y. M. Zhao, S. S. Liang, J. Jiang, Z. J. Zhang, H. T. Ren, X. L. Lei, R. B. Yi, Y. W. Qiu, Y. F. Zhang, X. Liu, M. H. Wu, L. Yan, C.-G. Duan, S. L. Zhang, H. P. Fang. Novel 2D CaCl crystals with metallicity, room-temperature ferromagnetism, heterojunction, piezoelectricity-like property and monovalent calcium ions. Natl. Sci. Rev. 8, nwaa274 (2021).
27. M. Yan, Q. Zhu, S. Wang, Y. Ren, G. Feng, L. Liu, H. Peng, Y. He, J. Wang, P. Zhou, X. Meng, X. Tang, J. Chu, B. Dkhil, B. Tian, C. Duan. Ferroelectric Synaptic Transistor Network for Associative Memory. Adv. Electron. Mater. 7, 2001276 (2021).
28. D.-D. Xu, R.-R. Ma, A.-P. Fu, Z. Guan, N. Zhong, H. Peng, P.-H. Xiang, C.-G. Duan. Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric. Nat. Commun. 12, 655 (2021).
29. M.-F. Tsai, Y.-Z. Zheng, S.-C. Lu, J.-D. Zheng, H. Pan, C.-G. Duan, P. Yu, R. Huang, Y.-H. Chu. Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible Energy Storage. Adv. Funct. Mater. 31, 2105060 (2021).
30. Y.-H. Shen, W.-Y. Tong, H. Hu, J.-D. Zheng, C.-G. Duan. Exotic Dielectric Behaviors Induced by Pseudo-Spin Texture in Magnetic Twisted Bilayer. Chin. Phys. Lett. (Express Letter) 38, 037501 (2021).
31. Y. Shen, X. Wan, Q. Zhao, G. Li, C.-G. Duan. Non-d0 ferroelectricity from semicovalent superexchange in bismuth ferrite. Phys. Rev. B 104, 024421 (2021).
32. Y.-D. Liou, S.-Z. Ho, W.-Y. Tzeng, Y.-C. Liu, P.-C. Wu, J. Zheng, R. Huang, C.-G. Duan, C.-Y. Kuo, C.-W. Luo, Y.-C. Chen, J.-C. Yang. Extremely Fast Optical and Nonvolatile Control of Mixed-Phase Multiferroic BiFeO3 via Instantaneous Strain Perturbation. Adv. Mater. 33, 2007264 (2021).
33. X. Deng, S.-Q. Wang, Y.-X. Liu, N. Zhong, Y.-H. He, H. Peng, P.-H. Xiang, C.-G. Duan. A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing. Adv. Funct. Mater. 31, 2101099 (2021).
34. G. Wu, B. Tian, L. Liu, W. Lv, S. Wu, X. Wang, Y. Chen, J. Li, Z. Wang, S. Wu, H. Shen, T. Lin, P. Zhou, Q. Liu, C. Duan, S. Zhang, X. Meng, S. Wu, W. Hu, X. Wang, J. Chu, J. Wang. Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains. Nat. Electron. 3, 43 (2020).
35. D. Li, L. Zhu, X. Liu, W. Xiao, J. Yang, R. Ma, L. Ding, F. Liu, C. Duan, M. Fahlman, Q. Bao. Enhanced and Balanced Charge Transport Boosting Ternary Solar Cells Over 17% Efficiency. Adv. Mater. 32, 2002344 (2020).
36. H. Hu, W.-Y. Tong, Y.-H. Shen, X. Wan, C.-G. Duan. Concepts of the half-valley-metal and quantum anomalous valley Hall effect. npj Comput. Mater. 6, 129 (2020).
37. Z. Guan, H. Hu, X. Shen, P. Xiang, N. Zhong, J. Chu, C. Duan. Research Progress in Two-Dimensional Ferroelectric Materials. Adv. Electron. Mater. 6, 1900818 (2020).
38. X. Deng, Y.-F. Zhao, N. Zhong, F.-Y. Yue, R. Huang, H. Peng, X.-D. Tang, P.-H. Xiang, Y.-H. Chu, C.-G. Duan. Proton-Mediated Phase Control in Flexible and Transparent Mott Transistors. Adv. Electron. Mater. 6, 1900742 (2020).
39. D. D. Xu, X. Deng, Y. F. Zhao, R. R. Ma, N. Zhong, R. Huang, H. Peng, P. H. Xiang, C. G. Duan. Hydrogenation Dynamics of Electrically Controlled Metal-Insulator Transition in Proton-Gated Transparent and Flexible WO3 Transistors. Adv. Funct. Mater. 29, 1902497 (2019).
40. B. B. Tian, L. Liu, M. G. Yan, J. L. Wang, Q. B. Zhao, N. Zhong, P. H. Xiang, L. Sun, H. Peng, H. Shen, T. Lin, B. Dkhi, X. J. Meng, J. H. Chu, X. D. Tang, C. G. Duan. A Robust Artificial Synapse Based on Organic Ferroelectric Polymer. Adv. Electron. Mater. 5, 1800600 (2019).
41. Y. Shen, J. Cai, H. C. Ding, X. W. Shen, Y. W. Fang, W. Y. Tong, X. G. Wan, Q. B. Zhao, C. G. Duan. Role of Lone-Pairs in Driving Ferroelectricity of Perovskite Oxides: An Orbital Selective External Potential Study. Adv. Theory Simul. 2, 9 (2019).
42. X.-W. Shen, Y.-W. Fang, B.-B. Tian, C.-G. Duan. Two-Dimensional Ferroelectric Tunnel Junction: The Case of Monolayer In:SnSe/SnSe/Sb:SnSe Homostructure. ACS Appl. Electron. Mater. 1, 1133 (2019).
43. Q. Y. Ji, S. Z. Pan, P. L. He, J. P. Wang, P. F. Lu, H. Li, X. C. Gong, K. Lin, W. B. Zhang, J. Y. Ma, H. X. Li, C. G. Duan, P. Liu, Y. Bai, R. X. Li, F. He, J. Wu. Timing Dissociative Ionization of H2 Using a Polarization-Skewed Femtosecond Laser Pulse. Phys. Rev. Lett. 123, 233202 (2019).
44. Z. Guan, N. Yang, Z. Q. Ren, N. Zhong, R. Huang, W. X. Chen, B. B. Tian, X. D. Tang, P. H. Xiang, C. G. Duan, J. H. Chu. Mediation in the second-order synaptic emulator with conductive atomic force microscopy. Nanoscale 11, 8744 (2019).
45. C.-G. Duan. Topology paving the way to controllable readout of ferroelectricity—self-assembled topologically confined domain walls become the key to ferroelectric memory. J. Materiomics 5, 49 (2019). 论著(章节)
1. Xin-Wei Shen, He Hu, Chun-Gang Duan. Spintronic 2D Materials: Fundamentals and Applications, Chapter 3, Two-dimensional ferrovalley materials (Materials Today). Elsevier Science (2019). ISBN: 978-0-081-02155-2 2. Y.W. Fang, W.Y. Tong, C.G. Duan, Integrated Multiferroic heterostructures and applications, Edited by Ming Liu and Ziyao Zhou, Chapter 4, Multiferroic Simulations, Wiley-VCH (2019). ISBN: 978-3-527-34177-1. 3. W.Y. Tong, C.G. Duan, Exchange Bias, Edited by Surender Kumar Sharma, Chapter 7, All-Electric Spintronics through Surface/Interface Effects, CRC Press (2017). ISBN: 978-1-4987-9723-8. 4. 龚士静,段纯刚,《自旋电子学导论》韩秀峰主编,第24章 “基于磁电耦合效应的电控磁性研究”,科学出版社 (2014). ISBN: 978-7-0304-2826-4.
前期代表性工作:
B. B. Tian, J. L. Wang, S. Fusil, Y. Liu, X. L. Zhao, S. Sun, H. Shen, T. Lin, J. L. Sun, C. G. Duan, M. Bibes, A. Barthélémy, B. Dkhil, V. Garcia, X. J. Meng, J. H. Chu. Tunnel electroresistance through organic ferroelectrics. Nat. Commun. 7, 11502 (2016). 综述和前瞻文章:
近期国际学术报告:
荣誉及奖励 |